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| Schottky Barrier Diodes (SBD) MA3S781E Silicon epitaxial planar type (cathode common) Unit : mm 0.28 0.05 For high-speed switching circuits I Features * SS-mini type 3-pin package * Allowing high-density mounting * Cathode common type 1.60 0.1 0.80 0.80 0.05 1.60 - 0.03 0.80 0.80 0.51 0.51 1 + 0.05 3 2 I Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage (DC) Peak reverse voltage Average forward current Peak forward current Single Double Single Double Tj Tstg IFM Symbol VR VRM IF Rating 30 30 30 20 150 110 125 -55 to +125 C C mA Unit V V mA 0.60 - 0.03 + 0.05 0.28 0.05 0.44 0.44 + 0.05 1 : Anode 1 2 : Anode 2 3 : Cathode SS-Mini Type Package (3-pin) 0.88 - 0.03 Marking Symbol: M2R Internal Connection 1 3 2 Junction temperature Storage temperature I Electrical Characteristics Ta = 25C 3C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Vin = 3 V(peak), f = 30 MHz RL = 3.9 k, CL = 10 pF 1.5 1.0 Conditions Min Typ Max 1.0 0.4 1.0 Unit A V V pF ns Detection efficiency 65 0.12 - 0.02 + 0.05 0.28 0.05 % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 2 000 MHz 3. * : trr measuring circuit Bias Application Unit N-50BU Input Pulse tp 10% Output Pulse tr t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 1 MA3S781E IF V F 103 Schottky Barrier Diodes (SBD) VF Ta 1.6 1.4 102 103 IR VR 102 75C 25C Forward current IF (mA) Forward voltage VF (V) Ta = 125C 10 - 20C 1.2 1.0 0.8 0.6 0.4 3 mA 0.2 1 mA Reverse current IR (A) Ta = 125C 10 75C IF = 30 mA 1 1 10-1 10-1 25C 10-2 0 0.2 0.4 0.6 0.8 1.0 1.2 0 -40 10-2 0 40 80 120 160 200 0 5 10 15 20 25 30 Forward voltage VF (V) Ambient temperature Ta (C) Reverse voltage VR (V) IR T a 103 3.0 Ct VR 1 000 IF(surge) tW Ta = 25C 300 tW 100 30 10 3 1 0.3 0.1 0.03 IF ( surge ) Reverse current IR (A) VR = 30 V 10 V 1V Terminal capacitance Ct (pF) 102 2.5 2.0 10 1.5 1 1.0 10-1 0.5 10-2 -40 0 Forward surge current IF(surge) (A) 0 40 80 120 160 200 0 5 10 15 20 25 30 0.1 0.3 1 3 10 30 Ambient temperature Ta (C) Reverse voltage VR (V) Pulse width tW (ms) 2 |
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